CPH5803 no.6935-1/5 features ? composite type with an n-channel sillicon mosfet (mch3405) and a schottky barrier diode (sbs004m) contained in one package facilitating high-density mounting. [mosfet] ? low on-resistance. ? ultrahigh-speed switching. ? 1.8v drive. [sbd] ? short reverse recovery time . ? low forward voltage . sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn6935 CPH5803 package dimensions unit : mm 2171 [CPH5803] mosfet : n-channel silicon mosfet sbd : schottky barrier diode dc / dc converter applications specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss 20 v gate-to-source voltage v gss 10 v drain current (dc) i d 1.5 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 6 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 15 v non-repetitive peak reverse surge voltage v rsm 15 v average output current i o 1a surge forward current i fsm 50hz sine wave, 1 cycle 10 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : qd any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 1.6 0.6 0.6 2.8 0.2 2.9 0.05 0.4 0.95 0.2 0.9 0.7 0.15 0.4 12 3 4 5 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode sanyo : cph5 33001 ts im ta-3101
CPH5803 no.6935-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =1a 1.9 2.8 s r ds (on)1 i d =1a, v gs =4v 160 210 m w static drain-to-source on-state resistance r ds (on)2 i d =0.5a, v gs =2.5v 200 280 m w r ds (on)3 i d =0.1a, v gs =1.8v 280 390 m w input capacitance ciss v ds =10v, f=1mhz 100 pf output capacitance coss v ds =10v, f=1mhz 22 pf reverse transfer capacitance crss v ds =10v, f=1mhz 15 pf turn-on delay time t d (on) see specified test circuit 6.5 ns rise time t r see specified test circuit 28 ns turn-off delay time t d (off) see specified test circuit 19 ns fall time t f see specified test circuit 13 ns total gate charge qg v ds =10v, v gs =10v, i d =1.5a 4.5 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =1.5a 0.4 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =1.5a 0.4 nc diode forward voltage v sd i s =1.5a, v gs =0 0.83 1.2 v [sbd] reverse voltage v r i r =1ma 15 v forward voltage v f 1i f =0.5a 0.30 0.35 v v f 2i f =1a 0.35 0.40 v reverse current i r v r =6v 500 m a interterminal capacitance c v r =10v, f=1mhz, 1 cycle 42 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 15 ns therminal resistance rth(j-a) mounted on a ceramic board (900mm 2 5 0.8mm) 110 c / w electrical connection (top view) switching time test circuit trr test circuit [mosfet] [sbd] pw=10 m s d.c. 1% p. g 50 w g s d i d =1a r l =10 w v dd =10v v out CPH5803 v in 0v 4v v in duty 10% 50 100 10 --5v t rr 100ma 100ma 10ma 10 s 543 12 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode
CPH5803 no.6935-3/5 0.1 1.0 23 57 23 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 --60 --40 --20 0 20 40 60 80 100 120 140 160 0246810 r ds (on) -- v gs it02918 0 0 0.4 0.8 1.6 2.0 0.2 1.2 0 50 100 150 200 250 300 350 400 0 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 i d -- v ds v gs =1.0v 1.5v 1.8v it02916 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d -- v gs v ds =10v --25 c ta=75 c it02917 25 c r ds (on) -- ta it02919 50 100 150 200 250 300 350 400 0 ta=25 c 1.0a i d =0.5a 2.5v 3.0v 4.0v 6.0v 10.0v i d =1.0a, v gs =4.0v i d =0.5a, v gs =2.5v 7 5 3 2 10 100 7 5 3 2 1.0 sw time -- i d v dd =10v v gs =4v t d (on) t d (off) t r t f it02922 ciss, coss, crss -- v ds it02920 0.001 0.01 23 57 0.1 23 57 1.0 23 57 23 5 10 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 ? y fs ? -- i d v ds =10v 75 c 25 c ta= --25 c it02921 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.01 0.1 10 1.0 7 5 3 2 7 5 3 2 7 5 3 2 i f -- v sd v gs =0 --25 c 25 c ta=75 c [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet ] [mosfet] 02468101214161820 10 100 1000 7 5 3 2 7 5 3 2 f=1mhz ciss coss crss it02923 static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf
CPH5803 no.6935-4/5 [sbd] 012345 0 1 2 3 4 5 6 7 8 9 10 v gs -- qg v ds =10v i d =1.8a it02924 [mosfet] [mosfet] [mosfet] 0 0 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 p d -- ta it02926 a s o 2 3 5 7 2 3 5 7 2 3 5 7 10 1.0 0.1 0.01 0.1 23 57 1.0 0.01 23 57 23 57 10 23 5 it02925 i dp =6.0a i d =1.5a operation in this area is limited by r ds (on). 100 s 100ms dc operation 1ms 10ms <10 s 180 360 q 360 (2) (4) (3) (1) 1.0 10 2 2 3 100 1.0 10 2 3 5 7 2 3 5 7 357 2 c -- v r f=1mhz 0 100 10 1.0 0.1 0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 15 510 i r -- v r 0 0 0.2 0.4 0.6 0.8 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 1.4 p f (av) -- i o 0 0.1 0.01 0.3 0.4 0.5 0.1 0.2 1.0 2 7 5 3 2 7 5 3 2 i f -- v f ta=125 c 25 c 50 c 100 c ta=125 c 25 c 50 c 75 c 100 c it02927 it02928 it02929 it02930 [sbd] [sbd] 75 c [sbd] total gate charge, qg -- nc gate-to-source voltage, v gs -- v ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board(900mm 2 5 0.8mm) 1unit drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse mounted on a ceramic board(900mm 2 5 0.8mm) 1unit reverse voltage, v r -- v interterminal capacitance, c -- pf reverse voltage, v r -- v reverse current, i r -- ma average forward current, i o -- a average forward power dissipation, p f (av) -- w forward voltage, v f -- v forward current, i f -- a (1) rectangular wave q =60 (2) rectangular wave q =120 (3) rectangular wave q =180 (4) sine wave q =180 rectangular wave sine wave
CPH5803 no.6935-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2001. specifications and information herein are subject to change without notice. ps i s 20ms t 7 0.01 23 7 0.1 0 52 2 37 1.0 5 12 10 8 6 4 2 3 i s -- t it00636 [sbd] time, t -- s surge forward current, i fsm (peak) -- a current waveform 50hz sine wave
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